Title:
純シリコンを製造するための方法およびシステム
Document Type and Number:
Japanese Patent JP2011516376
Kind Code:
A
Abstract:
A process for producing high-purity silicon includes (1) preparing trichlorosilane by reacting silicon with hydrogen chloride in at least one hydrochlorination process; (2) preparing monosilane by disproportionation of the trichlorosilane to provide a monosilane-containing reaction mixture containing silicon tetrachloride as a by-product; (3) in parallel to (1), reacting silicon tetrachloride obtained as the by-product in (2) with silicon and hydrogen in at least one converting process to produce a trichlorosilane-containing reaction mixture; and (4) thermally decomposing the monosilane into silicon and hydrogen.
Inventors:
Schmidt, Christian
Petrick, adolph
Hahn, johem
Petrick, adolph
Hahn, johem
Application Number:
JP2011502281A
Publication Date:
May 26, 2011
Filing Date:
March 31, 2009
Export Citation:
Assignee:
Schmidt Silicon Technology Gezel Shaft Mitt Beschlenktel Haftung
International Classes:
C01B33/037; C01B33/035
Foreign References:
| WO2007039326A1 | 2007-04-12 | |||
| WO2000039027A1 | 2000-07-06 | |||
| US4676967A | 1987-06-30 | |||
| US20040047797A1 | 2004-03-11 | |||
| WO2007039326A1 | 2007-04-12 | |||
| WO2000039027A1 | 2000-07-06 | |||
| US4676967A | 1987-06-30 |
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Yoshihiro Kobayashi
Nagasaka Tomoyasu
Atsushi Ebiya
Takashi Ishida
Tetsuji Koga
Yoshihiro Kobayashi
Nagasaka Tomoyasu
Atsushi Ebiya