Title:
CHARGED PARTICLE BEAM LITHOGRAPHY METHOD AND CHARGED PARTICLE BEAM LITHOGRAPHY DEVICE
Document Type and Number:
Japanese Patent JP2018156976
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To determine an offset time, being added to irradiation time, efficiently with high accuracy.SOLUTION: A lithography device includes a current limit aperture, a blanking deflector for controlling irradiation time by deflecting a charged particle beam passed through the current limit aperture and changing over beam ON and beam OFF, a blanking aperture for shielding the charged particle beam, deflected to become beam OFF by the blanking deflector, and a lens provided between the current limit aperture and the blanking aperture. An offset time is calculated by substituting a lens value, set in the lens, into a prescribed function, the irradiation time is corrected by adding the offset time to the irradiation time for patterning, and then the blanking deflector changes over the beam ON and beam OFF based on the corrected irradiation time.SELECTED DRAWING: Figure 1
Inventors:
NOMURA HARUYUKI
Application Number:
JP2017050094A
Publication Date:
October 04, 2018
Filing Date:
March 15, 2017
Export Citation:
Assignee:
NUFLARE TECHNOLOGY INC
International Classes:
H01L21/027; G03F7/20; H01J37/305
Attorney, Agent or Firm:
Tsuyoshi Shigeno
Takayuki Shigeno
Takayuki Shigeno