Title:
POINT DEFECT EVALUATION METHOD
Document Type and Number:
Japanese Patent JP2019047068
Kind Code:
A
Abstract:
To provide a method for evaluation about a physical value concerning the behavior of a point defect, by which vacancy and I-Si behaviors can be grasped separately by only combination of relatively common techniques.SOLUTION: A point defect evaluation method is provided, which comprises the steps of: performing a thermal treatment on a sample cut from crystal involving void defects, which is grown by Czochralski (CZ) method or magnetic field-applied CZ (MCZ) method, provided that the thermal treatment is conducted at a temperature equal to or higher than a temperature that causes an internal wall oxide film of a void defect to dissolve and depends on an interstitial oxygen concentration in crystal, while at least one of a temperature and time is changed; and evaluating a physical property value concerning the behavior of a point defect from one or more of respective changes of the void defect size, density and a defect-free layer depth, which are observed accompanying the change in thermal treatment condition.SELECTED DRAWING: Figure 1
Inventors:
HOSHI RYOJI
OTA MASAYUKI
KAMATA HIROYUKI
OTA MASAYUKI
KAMATA HIROYUKI
Application Number:
JP2017171610A
Publication Date:
March 22, 2019
Filing Date:
September 06, 2017
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
International Classes:
H01L21/66; C30B15/00; C30B29/06
Domestic Patent References:
| JP2015135872A | 2015-07-27 | |||
| JP2002246429A | 2002-08-30 | |||
| JP2013021276A | 2013-01-31 | |||
| JP2004020341A | 2004-01-22 | |||
| JP2002334886A | 2002-11-22 |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi