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Title:
PLASMA PROCESSING APPARATUS AND METHOD, AND MANUFACTURING METHOD FOR ELECTRONIC DEVICE
Document Type and Number:
Japanese Patent JP2019102277
Kind Code:
A
Abstract:
To provide a plasma processing apparatus and a method capable of performing short-time heating and high-speed processing and stably utilizing plasma when performing high-temperature heat treatment in the vicinity of a surface of a substrate just for short time and in a uniform manner, and a manufacturing method for an electronic device.SOLUTION: In an inductively-coupled plasma torch unit T, a coil 3 and dielectric members 4 and 5 are disposed and a chamber 7 is ring-shaped. In an opening 8 in the chamber 7, the substrate 2 is irradiated with plasma P. The chamber 7 and the substrate 2 are relatively moved in a direction across a length direction of the opening 8. When a substrate opposing part 7d of an inner wall surface of the chamber 7 is made into a plane and a cross section cutting the substrate facing part with a surface vertical in the length direction of the opening is disposed in such a manner that a substrate placement base comes to a lower side, in a space 70 between the substrate opposing part and the substrate placement base, at least one of gas flows emitted from left and right gas emission ports 14a and 17a is continuously increased/decreased, and the plasma P is oscillated from side to side.SELECTED DRAWING: Figure 1A

Inventors:
OKUMURA TOMOHIRO
Application Number:
JP2017231972A
Publication Date:
June 24, 2019
Filing Date:
December 01, 2017
Export Citation:
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Assignee:
PANASONIC IP MAN CORP
International Classes:
H05H1/30; H01L21/3065
Domestic Patent References:
JP2007323812A2007-12-13
JP2017212195A2017-11-30
JP2008047740A2008-02-28
JPH0996609A1997-04-08
JP2013120687A2013-06-17
Attorney, Agent or Firm:
Michiko Matsutani
Hiroshi Okabe
Mitsuo Wada