Title:
PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2019117323
Kind Code:
A
Abstract:
To provide a photosensitive resin composition capable of giving a film having high transparency, high light fastness and high heat resistance after patterned, while allowing formation of a fine pattern with light in a wide wavelength range, a pattern forming method using the photosensitive resin composition, and a method for manufacturing an optical semiconductor element.SOLUTION: The photosensitive resin composition comprises (A) an oxetane ring-containing isocyanuric acid compound represented by formula (A1) below, (B) an epoxy group-containing silicone resin, and (C) a photoacid generator. In the formula, Rand Reach independently represent a monovalent hydrocarbon group having 1 to 8 carbon atoms; Rand Reach independently represent a divalent hydrocarbon group having 1 to 8 carbon atoms and may contain an ester bond or an ether bond present between carbon atoms; and Arepresents a methyl group, a 2-propenyl group or a group represented by a specific formula.SELECTED DRAWING: None
Inventors:
MARUYAMA HITOSHI
KONDO KAZUNORI
KONDO KAZUNORI
Application Number:
JP2017251705A
Publication Date:
July 18, 2019
Filing Date:
December 27, 2017
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
G03F7/004; C08G59/24; C08G59/26; C08G59/30; C08G65/22; G03F7/032; G03F7/075; G03F7/20
Domestic Patent References:
| JP2013140338A | 2013-07-18 | |||
| JP2001329050A | 2001-11-27 | |||
| JP2012001668A | 2012-01-05 | |||
| JP2008032763A | 2008-02-14 |
Foreign References:
| US20160147145A1 | 2016-05-26 | |||
| US20080113283A1 | 2008-05-15 | |||
| KR20130113635A | 2013-10-16 | |||
| KR20130113666A | 2013-10-16 |
Attorney, Agent or Firm:
Hideaki International Patent Office