Title:
PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2019117325
Kind Code:
A
Abstract:
To provide a photosensitive resin composition capable of giving a film having high transparency, high light fastness and high heat resistance after patterned, while allowing formation of a fine pattern with light in a wide wavelength range, a pattern forming method using the photosensitive resin composition, and a method for manufacturing an optical semiconductor element.SOLUTION: The photosensitive resin composition comprises (A) a silicone resin modified with an alicyclic epoxy at both terminals, represented by formula (A1) below, and (B) a photoacid generator. In the formula, Rto Reach independently represent an optionally substituted monovalent hydrocarbon group having 1 to 20 carbon atoms; and n represents an integer of 1 to 600. When n is an integer of 2 or more, each Rmay be the same or different from others and each Rmay be the same or different from others.SELECTED DRAWING: None
Inventors:
MARUYAMA HITOSHI
KONDO KAZUNORI
KONDO KAZUNORI
Application Number:
JP2017251774A
Publication Date:
July 18, 2019
Filing Date:
December 27, 2017
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
G03F7/004; C08G59/24; C08G59/26; C08G59/30; G03F7/032; G03F7/075; G03F7/20
Domestic Patent References:
| JP2012001668A | 2012-01-05 | |||
| JPH04306222A | 1992-10-29 | |||
| JP2013173920A | 2013-09-05 | |||
| JPH0320374A | 1991-01-29 | |||
| JPH0598014A | 1993-04-20 |
Foreign References:
| WO2007066597A1 | 2007-06-14 | |||
| US5260349A | 1993-11-09 | |||
| US20060199081A1 | 2006-09-07 | |||
| US20020035199A1 | 2002-03-21 | |||
| CN105278249A | 2016-01-27 |
Attorney, Agent or Firm:
Hideaki International Patent Office