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Title:
SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019178062
Kind Code:
A
Abstract:
To provide a silicon carbide substrate capable of forming a high quality semiconductor layer on a principal surface.SOLUTION: In a silicon carbide substrate comprising silicon carbide, when etching its principal surface by chlorine gas, the total length of a linear etch pit group observed on the principal surface agrees with a substrate diameter or less of the silicon carbide substrate.SELECTED DRAWING: Figure 6

Inventors:
HONKE TSUBASA
OKITA KYOKO
Application Number:
JP2019098018A
Publication Date:
October 17, 2019
Filing Date:
May 24, 2019
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B29/36; H01L21/304; H01L21/308; H01L21/66
Domestic Patent References:
JP2008068390A2008-03-27
JP2011513991A2011-04-28
JP2012248569A2012-12-13
JP2013247329A2013-12-09
JP2009238891A2009-10-15
JP2012004270A2012-01-05
JP2009091222A2009-04-30
JP2002226300A2002-08-14
Attorney, Agent or Firm:
Shuhei Kitano
Katsuya Tanaka