Title:
SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019178062
Kind Code:
A
Abstract:
To provide a silicon carbide substrate capable of forming a high quality semiconductor layer on a principal surface.SOLUTION: In a silicon carbide substrate comprising silicon carbide, when etching its principal surface by chlorine gas, the total length of a linear etch pit group observed on the principal surface agrees with a substrate diameter or less of the silicon carbide substrate.SELECTED DRAWING: Figure 6
Inventors:
HONKE TSUBASA
OKITA KYOKO
OKITA KYOKO
Application Number:
JP2019098018A
Publication Date:
October 17, 2019
Filing Date:
May 24, 2019
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B29/36; H01L21/304; H01L21/308; H01L21/66
Domestic Patent References:
| JP2008068390A | 2008-03-27 | |||
| JP2011513991A | 2011-04-28 | |||
| JP2012248569A | 2012-12-13 | |||
| JP2013247329A | 2013-12-09 | |||
| JP2009238891A | 2009-10-15 | |||
| JP2012004270A | 2012-01-05 | |||
| JP2009091222A | 2009-04-30 | |||
| JP2002226300A | 2002-08-14 |
Attorney, Agent or Firm:
Shuhei Kitano
Katsuya Tanaka
Katsuya Tanaka