Title:
SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2019212991
Kind Code:
A
Abstract:
To provide a solid-state imaging device that can dramatically increase the internal electric field strength without reducing the thickness of a photoelectric conversion film that has a function to perform multiplication by avalanche multiplication phenomenon in the photoelectric conversion film, and a manufacturing method thereof.SOLUTION: In a solid-state imaging device formed by integrally forming a photoelectric conversion film 20 on a circuit board unit 30 including a signal readout circuit unit 100, a predetermined number of signal readout electrode units are provided corresponding to pixels 5 on the photoelectric conversion film 20 side of the signal readout circuit unit 100, and each of the electrode portions includes a signal readout electrode 1 having a tip portion 1A inserted into the photoelectric conversion film 20 and an auxiliary electrode 4 arranged so that at least a part thereof is in contact with the photoelectric conversion film 20, and a different voltage is applied to each of the signal readout electrode 1 and the auxiliary electrode 4 such that a potential difference is generated between the tip portion 1A of the signal readout electrode 1 and the auxiliary electrode 4.SELECTED DRAWING: Figure 1
Inventors:
NANBA MASAKAZU
HONDA YUKI
TAMEMURA SHIGEAKI
OTAKE HIROSHI
HONDA YUKI
TAMEMURA SHIGEAKI
OTAKE HIROSHI
Application Number:
JP2018105444A
Publication Date:
December 12, 2019
Filing Date:
May 31, 2018
Export Citation:
Assignee:
JAPAN BROADCASTING CORP
International Classes:
H04N5/369
Attorney, Agent or Firm:
Hiroshi Kawano
Teruho Tsukui
Teruho Tsukui