Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019216248
Kind Code:
A
Abstract:
To provide a transistor having an excellent electric characteristic, suitable for refining, and having a high switching speed.SOLUTION: A semiconductor device has a transistor including an oxide semiconductor, a gate electrode, a gate insulator, and the oxide semiconductor has a first region in which the oxide semiconductor and the gate electrode are overlapped each other via the gate insulator. In the transistor, a threshold voltage is larger than 0 V, and the switching speed is less than 100 nano seconds.SELECTED DRAWING: Figure 1
Inventors:
MATSUBAYASHI DAISUKE
KOBAYASHI YOSHIYUKI
NAGATSUKA SHUHEI
SHIONOIRI YUTAKA
KOBAYASHI YOSHIYUKI
NAGATSUKA SHUHEI
SHIONOIRI YUTAKA
Application Number:
JP2019136938A
Publication Date:
December 19, 2019
Filing Date:
July 25, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; H01L21/8234; H01L21/8242; H01L27/088; H01L27/108
Domestic Patent References:
| JP2013021315A | 2013-01-31 | |||
| JP2013038400A | 2013-02-21 | |||
| JP2013021313A | 2013-01-31 | |||
| JP2013236068A | 2013-11-21 |