Title:
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
Document Type and Number:
Japanese Patent JP2020017586
Kind Code:
A
Abstract:
To provide a plasma processing apparatus and a plasma processing method capable of improving plasma ignitability without changing a desired process condition and suppressing an influence on a processed size of an object to be processed.SOLUTION: A plasma processing apparatus 100 includes a processing chamber 114, a magnetron 105 that generates microwaves and projects the microwaves into the processing chamber 114, an electrode that is disposed in the processing chamber 114 and on which the wafer 300 is mounted, an electrostatic attraction power supply 112 that generates a potential for electrostatically attracting the wafer 300 to the electrode, a process gas supply source 118 that supplies a process gas into the processing chamber 114, and a plasma ignition promoting device. The plasma ignition promoting devices are ultraviolet light sources 102 and 115 that irradiate the inside of the processing chamber 114 with pulse-modulated ultraviolet light.SELECTED DRAWING: Figure 1
Inventors:
XU HAO
UCHIDA TAKESHIGE
NAKAMOTO SHIGERU
FUKUCHI KOSUKE
INOUE TOMOMI
UCHIDA TAKESHIGE
NAKAMOTO SHIGERU
FUKUCHI KOSUKE
INOUE TOMOMI
Application Number:
JP2018138374A
Publication Date:
January 30, 2020
Filing Date:
July 24, 2018
Export Citation:
Assignee:
HITACHI HIGH TECH CORP
International Classes:
H01L21/3065
Domestic Patent References:
| JPH04137530A | 1992-05-12 | |||
| JPH0547713A | 1993-02-26 | |||
| JP2013041831A | 2013-02-28 |
Attorney, Agent or Firm:
Patent Business Corporation Daiichi International Patent Office