Title:
N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN DRIFT VOLUME
Document Type and Number:
Japanese Patent JP2020021941
Kind Code:
A
Abstract:
To provide an n-channel bipolar power semiconductor device having a p-layer in a drift volume.SOLUTION: A power semiconductor device 1 having a semiconductor body 10 arranged between a first load terminal 11 and a second load terminal 12 includes: a source region 101 having a dopant of a first conductivity type; a semiconductor channel region 102 having a dopant of a second conductivity type; and a control electrode 131 that is a trench 13 arranged adjacent to the semiconductor channel region, the control electrode being insulated from the semiconductor body by an insulator 132. The semiconductor body further includes: a barrier region 103 having a dopant of the first conductivity type; and a drift volume having at least a first drift region 104 having a dopant of the second conductivity type, the barrier region coupling the first drift region with the semiconductor channel region.SELECTED DRAWING: Figure 1A
Inventors:
ROMAN BABURSKE
MARKUS BINA
HANS-JOACHIM SCHULZE
OANA JULIA SPULBER
MARKUS BINA
HANS-JOACHIM SCHULZE
OANA JULIA SPULBER
Application Number:
JP2019146053A
Publication Date:
February 06, 2020
Filing Date:
August 08, 2019
Export Citation:
Assignee:
INFINEON TECHNOLOGIES AG
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/12; H01L29/739
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation