Title:
COMPOUND SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE, AND AMPLIFIER
Document Type and Number:
Japanese Patent JP2020027912
Kind Code:
A
Abstract:
To provide a compound semiconductor device which can improve heat dissipation properties, a method of manufacturing the compound semiconductor device, and an amplifier.SOLUTION: A compound semiconductor device 100 has a semiconductor chip 110 which includes a substrate 111 and a semiconductor layer 112, and has an active region 151 where a semiconductor element is provided and an inactive region 152 formed; and a heat conduction body 120 of diamond having a third plane 120a stuck on a second plane 111b. The semiconductor chip 110 has first wiring 114 which is connected to the semiconductor element, and penetrates in the active region 151 from a first plane 111a to the second plane 111b and extends on the second plane 111b from the active region 151 to the inactive region 152. The heat conduction body 120 has an opening part 121 penetrating in a region, overlapping with the inactive region 152, from the third plane 120a to a fourth plane 120b, and second wiring 122 connected to the first wiring 114 is formed in the opening part 121.SELECTED DRAWING: Figure 7
Inventors:
MINOURA YUICHI
TAGI TOSHIHIRO
OKAMOTO NAOYA
TAGI TOSHIHIRO
OKAMOTO NAOYA
Application Number:
JP2018153226A
Publication Date:
February 20, 2020
Filing Date:
August 16, 2018
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/338; H01L21/768; H01L29/778; H01L29/812
Domestic Patent References:
| JP6448865B1 | 2019-01-09 | |||
| JP2013183060A | 2013-09-12 | |||
| JPH10275878A | 1998-10-13 | |||
| JP2015537392A | 2015-12-24 | |||
| JP2017108047A | 2017-06-15 | |||
| JP2016063178A | 2016-04-25 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito