Title:
ETCHING METHOD AND ETCHING DEVICE
Document Type and Number:
Japanese Patent JP2020080349
Kind Code:
A
Abstract:
To provide an etching method and an etching apparatus that are intended to suppress overetching and surface roughness of a semiconductor.SOLUTION: In an etching method, a mixed gas containing Cland His turned into plasma, and the plasma gas obtained by turning the mixed gas into plasma is supplied to a processing chamber 1001 containing a group III nitride semiconductor, and the group III nitride semiconductor is etched with the plasma gas. Hin the mixed gas is 1 volume% or more and 10 volume% or less.SELECTED DRAWING: Figure 1
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Inventors:
HORI MASARU
TANIDE ATSUSHI
NAKAMURA SHOHEI
TAKATSUJI SHIGERU
NADAHARA SOICHI
TANIDE ATSUSHI
NAKAMURA SHOHEI
TAKATSUJI SHIGERU
NADAHARA SOICHI
Application Number:
JP2018212151A
Publication Date:
May 28, 2020
Filing Date:
November 12, 2018
Export Citation:
Assignee:
UNIV NAGOYA
SCREEN HOLDINGS CO LTD
SCREEN HOLDINGS CO LTD
International Classes:
H01L21/3065
Domestic Patent References:
| JPH02271621A | 1990-11-06 | |||
| JP2004281815A | 2004-10-07 | |||
| JPH0945670A | 1997-02-14 | |||
| JPH09330916A | 1997-12-22 |
Other References:
S.J REARTON, C.R ABERNATHY AND F.REN: "Low bias electron cyclotron resonance plasma etching of GaN,AlN,and InN", APPLID PHYSICS LETTERS, vol. 64, no. 17, JPN6019051030, 25 April 1994 (1994-04-25), US, pages 2294 - 2296, XP000601704, ISSN: 0004792187, DOI: 10.1063/1.111648
Attorney, Agent or Firm:
Osamu Fujitani
Akinori Isshiki
Tomohiro Sumiya
Akinori Isshiki
Tomohiro Sumiya