Title:
METHOD FOR MANUFACTURING SiC BASE MATERIAL
Document Type and Number:
Japanese Patent JP2020128310
Kind Code:
A
Abstract:
To provide a method for manufacturing a SiC base material, capable of improving the equalization of performance characteristics, the suppression of contamination, and a life.SOLUTION: A method for manufacturing a SiC base material 100 comprises: a SiC member preparation step STEP1 of preparing a SiC member 10 consisting of SiC formed by a chemical vapor phase deposition method and having a planar portion 11; a mask covering step STEP2 of covering a part of the planar portion 11 with a mask 20; a shot-blasting step STEP3 of hollowing a portion except the portion covered with mask 20 from the part of planar portion 11 by shot-blasting the portion except the portion covered with the mask 20 in the planar portion 11 to form a projection 12 using the part of the planar portion 11 as a top surface 13; a mask removal step STEP4 of removing the mask 20 from the SiC member 10; an oxidation Si film deposition step STEP5 of thermally oxidizing the SiC member 10 after removing the mask 20 to form an oxidation Si film 30 on the surface of at least the hollowed portion 14; and an etching step STEP6 of removing the oxidation Si film 30 by wet etching.SELECTED DRAWING: Figure 1
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Inventors:
TEJIMA TAKASHI
ONODERA NORIO
ONODERA NORIO
Application Number:
JP2019021197A
Publication Date:
August 27, 2020
Filing Date:
February 08, 2019
Export Citation:
Assignee:
NGK SPARK PLUG CO
International Classes:
C30B29/36; C30B33/02
Domestic Patent References:
| JP2019009418A | 2019-01-17 | |||
| JP2005223292A | 2005-08-18 | |||
| JPH118216A | 1999-01-12 | |||
| JP2010165919A | 2010-07-29 | |||
| JP2014086710A | 2014-05-12 | |||
| JP2003086664A | 2003-03-20 |
Attorney, Agent or Firm:
Creation International Patent Office