Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2020144893
Kind Code:
A
Abstract:
To provide a semiconductor device including a pixel structure, in which, in a display device including a photosensor, the deterioration in imaging quality due to a change in output of the photosensor is prevented.SOLUTION: A photosensor 302 has the following pixel layout in order to suppress the change in potential of a node FD (a gate of a transistor 354) that accumulates charges: a shield wire is disposed between the FD (node) and an imaging signal line (photodiode resetting signal line 341, photosensor charge transferring signal line 342, or photosensor reference signal line 345) or between the FD (node) and a display signal line 343 so that the parasitic capacitance between the FD (node) and the signal line decreases or disappears. As the shield wire, a common wire with a fixed potential, such as an imaging power source line, a display power source line, a GND wire, or a common potential wire, is used.SELECTED DRAWING: Figure 3
Inventors:
AOKI TAKESHI
KUROKAWA YOSHIMOTO
IKEDA TAKAYUKI
TAMURA TERU
KUROKAWA YOSHIMOTO
IKEDA TAKAYUKI
TAMURA TERU
Application Number:
JP2020079091A
Publication Date:
September 10, 2020
Filing Date:
April 28, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
G06F3/042; G02F1/1368; G06F3/041; G09F9/30; G09F9/35
Domestic Patent References:
| JP2002330351A | 2002-11-15 | |||
| JP2009265512A | 2009-11-12 |
Foreign References:
| WO2010092709A1 | 2010-08-19 | |||
| US20090268132A1 | 2009-10-29 |