Title:
MEMORY DEVICE
Document Type and Number:
Japanese Patent JP2020150082
Kind Code:
A
Abstract:
To provide a storage device capable of reducing a load applied to a switch element.SOLUTION: A memory device according to an embodiment includes a first conductor, a second conductor, a resistance change layer, a first portion, and a second portion. The resistance change layer is connected to the first conductor or the second conductor. The first portion is provided between the first conductor and the second conductor, and has a first threshold voltage value at which the resistance value changes. The second portion is provided at least between the first conductor and the first portion, or between the second conductor and the first portion, and a second threshold voltage value at which the resistance value changes is higher than the first threshold voltage value.SELECTED DRAWING: Figure 3
Inventors:
IWASAKI TAKAYUKI
KOMATSU KATSUYOSHI
KAWAI HIROKI
KOMATSU KATSUYOSHI
KAWAI HIROKI
Application Number:
JP2019045019A
Publication Date:
September 17, 2020
Filing Date:
March 12, 2019
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Shiga International Patent Office