Title:
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2021008399
Kind Code:
A
Abstract:
To provide a new GaN single crystal having improved quality, and a new method for manufacturing a GaN single crystal.SOLUTION: A GaN single crystal has a gallium polar surface 11 as a main surface on one side and a nitrogen polar surface as a main surface on the opposite side. On at least one of the main surfaces, at least one first line segment LS1 is drawn that is a virtual line segment having a length of 40 mm and meets at least one of conditions (A1) and (B1). (A1) the maximum value of FWHM of XRC among all measurement points is less than 40 arcsec when an X ray incident surface is parallel to the first line segment when each ω scanning on the first line segment and the XRC of (002) reflection is measured at an interval of 0.2 mm, and (B1) a difference between the maximum value and minimum value of peak angles of the XRC among all measurement points is less than 0.2° when the X ray incident surface is parallel to the first line segment when each ω scanning on the first line segment and the XRC of the (002) reflection is measured at an interval of 0.2 mm.SELECTED DRAWING: Figure 6
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Inventors:
FUJISAWA HIDEO
MIKAWA YUTAKA
KAWABATA SHINICHIRO
NAMIDA HIDEO
MOCHIZUKI TAE
MIKAWA YUTAKA
KAWABATA SHINICHIRO
NAMIDA HIDEO
MOCHIZUKI TAE
Application Number:
JP2020169787A
Publication Date:
January 28, 2021
Filing Date:
October 07, 2020
Export Citation:
Assignee:
MITSUBISHI CHEM CORP
International Classes:
C30B29/38; C30B19/04; C30B33/06
Domestic Patent References:
| JP2014111527A | 2014-06-19 | |||
| JP2011051849A | 2011-03-17 | |||
| JP2006290676A | 2006-10-26 | |||
| JP2007254258A | 2007-10-04 | |||
| JP2011063504A | 2011-03-31 | |||
| JP2012136414A | 2012-07-19 |
Attorney, Agent or Firm:
Hidewa Patent Office