Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2021077813
Kind Code:
A
Abstract:
To provide a technique capable of relaxing a current concentration while suppressing inflow of a hole into a diode region from an IGBT region.SOLUTION: A semiconductor device comprising a semiconductor substrate divided into an IGBT region and a diode region, comprises: a p-type collector region provided at a position exposed to one main surface of the semiconductor substrate corresponding to the IGBT region; and an n-type cathode region provided at a position exposed at the one main surface of the semiconductor substrate corresponded to the diode region. A concentration of a p-type impurity of the collector region is thinner than a part between a peripheral part and a center part of the IGBT region in a plan view along a thickness direction of the semiconductor substrate, and/or the concentration of the n-type impurity in the cathode region is thinner than the part between the peripheral part and the center part of the diode region in a plan view along the thickness direction of the semiconductor substrate.SELECTED DRAWING: Figure 2
Inventors:
IWASHIMA YAYOI
Application Number:
JP2019205018A
Publication Date:
May 20, 2021
Filing Date:
November 12, 2019
Export Citation:
Assignee:
DENSO CORP
International Classes:
H01L29/78; H01L21/336; H01L29/739
Attorney, Agent or Firm:
Kaiyu International Patent Office