Title:
METHOD OF PRODUCING HEAT-TREATED WAFER, HEAT TREATMENT APPARATUS, AND APPARATUS FOR PRODUCING HEAT-TREATED WAFER
Document Type and Number:
Japanese Patent JP2021086955
Kind Code:
A
Abstract:
To provide a method for producing a semiconductor wafer having a performance desired as a substrate for a semiconductor device after heat treatment.SOLUTION: A method for producing a heat-treated wafer includes: determining a target range of the carbon concentration in the surface layer part of a semiconductor wafer after heat treatment; placing a semiconductor wafer on a wafer placing member that has an oxide film with a thickness on a base material surface, the thickness being in a range where it is estimated that a heat-treated wafer, in which carbon with a concentration in the target range is introduced in a surface layer part, can be obtained; and heat-treating a semiconductor wafer placed on the wafer placing member in a heat treatment furnace with the furnace atmosphere of an argon-containing atmosphere. The base material surface is a carbon-containing surface.SELECTED DRAWING: Figure 2
Inventors:
OKUUCHI SHIGERU
Application Number:
JP2019215638A
Publication Date:
June 03, 2021
Filing Date:
November 28, 2019
Export Citation:
Assignee:
SUMCO CORP
International Classes:
H01L21/324; C30B29/06; H01L21/683
Domestic Patent References:
| JP2015041738A | 2015-03-02 | |||
| JP2018190903A | 2018-11-29 | |||
| JP2018113320A | 2018-07-19 | |||
| JP2004214492A | 2004-07-29 |
Attorney, Agent or Firm:
Patent Service Corporation Patent Office Sykes