Title:
ETCHING DEVICE AND ETCHING METHOD
Document Type and Number:
Japanese Patent JP2021086991
Kind Code:
A
Abstract:
To make the thickness of an object to be etched to a target thickness with high accuracy.SOLUTION: An etching device that etches an object to be etched on a silicon wafer 1 includes a plasma device, a process gas supply device, a measuring device that measures the thickness of the object to be etched, a moving device that moves the object to be etched in a main scanning direction A and a sub-scanning direction B, and a control devices that control the operation of the plasma device, the measuring device, and the moving device, where the object to be etched after etching the object to be etched is moved at least in the sub-scanning direction, and subsequent etching is performed on the basis of the result of measuring the thickness of the object to be etched in a region along the sub-scan direction.SELECTED DRAWING: Figure 2
Inventors:
OBARA YASUTSUGU
Application Number:
JP2019217143A
Publication Date:
June 03, 2021
Filing Date:
November 29, 2019
Export Citation:
Assignee:
SPEEDFAM CO LTD
International Classes:
H01L21/3065; H01L21/683
Domestic Patent References:
| JP2009253234A | 2009-10-29 | |||
| JP2016162795A | 2016-09-05 | |||
| JP2004524685A | 2004-08-12 | |||
| JP2003298061A | 2003-10-17 | |||
| JPH05190499A | 1993-07-30 |
Foreign References:
| US20050098535A1 | 2005-05-12 |
Attorney, Agent or Firm:
Maeda patent office