Title:
METHOD FOR SINTERING NITROGEN-SOLUTIONIZED SILICON CARBIDE POWDER, AND METHOD FOR PRODUCING SILICON CARBIDE POLYCRYSTAL SUBSTRATE
Document Type and Number:
Japanese Patent JP2021138591
Kind Code:
A
Abstract:
To provide: a method for sintering nitrogen-solutionized silicon carbide powder, the method being more inexpensive and having better productivity than ever before and capable of obtaining a plate-like SiC polycrystal substrate; and a method for producing a silicon carbide polycrystal substrate.SOLUTION: A method for sintering nitrogen-solutionized silicon carbide powder includes a sintering step of sintering nitrogen-solutionized silicon carbide powder under an inert atmosphere to obtain a disk-like silicon carbide polycrystalline sintered body, the silicon carbide powder being obtained by solutionizing nitrogen to silicon carbide powder having a modal diameter of 50 nm. In the sintering step, the disk-like nitrogen-solutionized silicon carbide powder is sintered within a cylindrical carbon container, the silicon carbide powder being partitioned with disk-like carbon spacers. The thickness of the spacer is 1 mm or more and the thickness of the nitrogen-solutionized silicon carbide powder partitioned with the carbon spacers is 1 mm or more.SELECTED DRAWING: Figure 3
Inventors:
KITAGAWA TAIZO
Application Number:
JP2020039887A
Publication Date:
September 16, 2021
Filing Date:
March 09, 2020
Export Citation:
Assignee:
SUMITOMO METAL MINING CO
International Classes:
C04B35/575; C01B32/956; C04B41/80
Attorney, Agent or Firm:
Fumio Takino
Toshiaki Tsuda
Yasuhiro Fukuda
Atsushi Watanabe
Toshiaki Tsuda
Yasuhiro Fukuda
Atsushi Watanabe