Title:
【発明の名称】伝導度変調型MOSFET
Document Type and Number:
Japanese Patent JP2526653
Kind Code:
B2
Abstract:
In the MOSFET, a first layer (2a) is formed on a semiconductor substrate of a first conductivity-type, and has a second conductivity-type. A second buffer layer (2b) of the second type is on the first buffer layer, and has a higher depart concentration than the first buffer layer, and a lower film thickness than the first layer. A conductivity-type modulation layer (3) of the second conductivity-type is developed on this buffer layer.
Inventors:
Yasukazu Seki
Application Number:
JP1590189A
Publication Date:
August 21, 1996
Filing Date:
January 25, 1989
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/68; H01L21/336; H01L29/167; H01L29/36; H01L29/739; H01L29/78; (IPC1-7): H01L29/78
Domestic Patent References:
| JP63127572A |
Attorney, Agent or Firm:
Iwao Yamaguchi