Title:
【発明の名称】半導体装置
Document Type and Number:
Japanese Patent JP2540956
Kind Code:
B2
Abstract:
PURPOSE:To excite impurity optically in a semiconductor element and to improve activation rate by providing a mechanism to irradiate light having energy which is necessary for activation of the impurity, to the semiconductor element. CONSTITUTION:An outer periphery of a charge transfer image element 101 is enclosed by a light transmitter cup-like cold shield 4' which is provided with an input light opening of a light signal 102 in the central part; a heater 4a' is provided to the cold shield 4', which irradiates ultraviolet ray having energy necessary for activation of dopant impurity in the charge transfer image sensing element by heating the cold shield 4'; and an optical filter 5 is provided which shields detrimental shortwavelength which causes an increase of dark current, etc., of the charge transfer image sensing element 101 in an optical path formed between the cold shield 4' and the charge transfer image sensing element 101. Dopant impurity in the charge transfer image sensing element 101, activated by receiving irradiation of ultraviolet ray, does not freeze and deterioration of dynamic characteristics thereof is prevented.
Inventors:
KONUMA KAZUO
Application Number:
JP25320689A
Publication Date:
October 09, 1996
Filing Date:
September 28, 1989
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H05K7/20; H01L27/14; H01L31/02; (IPC1-7): H01L27/14; H01L31/02
Domestic Patent References:
| JP60250786A | ||||
| JP58146185A | ||||
| JP58180649U |
Attorney, Agent or Firm:
Sugano Naka