Title:
【発明の名称】半導体装置の動作解析装置
Document Type and Number:
Japanese Patent JP2557409
Kind Code:
B2
Abstract:
PURPOSE:To perform the analysis of the operation of a semiconductor device with respect to arbitrary wirings in the device by altering the direction of a focused ion beam or electron beam by means of a deflector, and introducing both charged beams substantially perpendicularly to a sample. CONSTITUTION:A sample 7 is set on a stage 8, the sample 7 is positioned by a stage control system 13 under the control of a computer 14, the direction of a focused ion beam 4 is altered by a deflector 5, and the beam is irradiated substantially perpendicularly to the sample 7. Thus, the beam is radiated to a coating section 20 of the sample 7, a coating film 16 is exfoliated to the surface of a wiring 19, and the operation is then analyzed by an electron beam tester. That is, an electron beam 3 is irradiated by an electron beam unit 1 on the exposed wiring 19, and secondary electrons 6 emitted from the sample 7 are detected by an electron detector 6. Thus, the operation of arbitrary wiring of a multilayer structure can be analyzed.
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Inventors:
KOMANO HARUKI
TAMAMUSHI SHUICHI
TAMAMUSHI SHUICHI
Application Number:
JP23732787A
Publication Date:
November 27, 1996
Filing Date:
September 24, 1987
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
G01R31/302; H01L21/66; G01R31/26; (IPC1-7): H01L21/66; G01R31/26; G01R31/302
Attorney, Agent or Firm:
Noriyuki Noriyuki (1 person outside)