Title:
【発明の名称】InAsホール効果素子
Document Type and Number:
Japanese Patent JP2557998
Kind Code:
B2
Abstract:
An InAs thin film (2) formed by epitaxial growth on an insulating or semi-insulating substrate (1) has a structure in which a portion near the interface of the InAs thin film (2) with the substrate (1) is a lower electron mobility portion (21), and another portion more remote from that interface is a higher electron mobility portion (22). The thin film (2) is doped with donor impurity atoms in at least the high mobility portion (22). A magnetoelectric transducer has the InAs thin film (2) as a magneto-sensitive portion. A magnetic amplifying type magnetoelectric transducer has a body (10, 11) of a ferromagnetic material arranged in the vicinity of the magneto-sensitive portion (2).
Inventors:
SHIBAZAKI ICHIRO
KANAYAMA JUICHI
ITO TAKASHI
KANAYAMA JUICHI
ITO TAKASHI
Application Number:
JP8819090A
Publication Date:
November 27, 1996
Filing Date:
April 04, 1990
Export Citation:
Assignee:
ASAHI CHEMICAL IND
International Classes:
H01L43/06; (IPC1-7): H01L43/06