Title:
【発明の名称】不揮発性メモリ素子
Document Type and Number:
Japanese Patent JP2597741
Kind Code:
B2
Abstract:
A non-volatile memory includes a single transistor having a semiconductor substrate, source and drain diffusion layers formed on a surface of the semiconductor substrate, and a gate electrode provided on the semiconductor substrate with a gate insulating film interposed between them. The non-volatile memory further includes a programmable insulating film provided in self-alignment between the gate electrode and at least one of the source and drain diffusion layers and the programmable insulating film is broken down by a voltage applied to the gate electrode so as to execute programming.
Inventors:
Yamauchi Shoko
Kenichi Tanaka
Keizo Sakiyama
Kenichi Tanaka
Keizo Sakiyama
Application Number:
JP23180090A
Publication Date:
April 09, 1997
Filing Date:
August 30, 1990
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/8247; G11C17/16; H01L21/8246; H01L27/112; H01L27/115; H01L29/788; H01L29/792; (IPC1-7): H01L21/8246; H01L21/8247; H01L27/112; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Shintaro Nogawa