Title:
【発明の名称】光励起電子放出素子
Document Type and Number:
Japanese Patent JP2601462
Kind Code:
B2
Abstract:
PURPOSE:To form an electron emitting element capable of controlling the emitting electron amount by the light and to enable the integration in a simple structure, by superposing a connection-type photoelectric converting domain and an MIM type electron emitting element domain. CONSTITUTION:A connection-type photoelectric converting domain is formed by superposing an N-type semiconductor domain 3, a P-type semiconductor domain 4, and a conductive domain 5, partially over a transparent electrode 2 of a light-permeable base plate 1. At both sides of an insulating domain 6, the domain 5 and a metallic layer 7 are positioned, and an MIM type electron emitting element domain is formed to emit electrons by applying a necessary voltage between the layer 7 and the domain 5, emitting from a recess 9 with a work function reducing material domain 8 at the surface of the layer 7. The electrons generated by the light permeated through the plate 1 are implanted to the domain 5, and the electron amount emitted from the recess 9 is controlled. Since the domain 5 is the common part for the two domains, the structure is simple, and since it is a superposed structure, the integration work is easy.
Inventors:
Suzuki Akira
Takeo Tsukamoto
Akira Shimizu
Masao Sugada
Shimoda Isamu
Masahiko Okunuki
Takeo Tsukamoto
Akira Shimizu
Masao Sugada
Shimoda Isamu
Masahiko Okunuki
Application Number:
JP28424086A
Publication Date:
April 16, 1997
Filing Date:
December 01, 1986
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L31/09; H01J1/30; H01J1/312; H01J1/34; H01L31/00; (IPC1-7): H01J1/34; H01J1/30
Domestic Patent References:
| JP62226530A | ||||
| JP62299088A | ||||
| JP4733537B1 | ||||
| JP433041B1 |
Attorney, Agent or Firm:
Yamashita