Title:
【発明の名称】光半導体装置
Document Type and Number:
Japanese Patent JP2661901
Kind Code:
B2
Abstract:
PURPOSE:To make it possible to maintain a highly sensitive light detecting characteristic at a light receiving surface stably, by forming a light transmitting thin film over the area from a region where a high resistance layer is exposed to the surface from the vicinity of the P-N junction of an photoelectric transducer part, to an impurity regions at the peripheral part. CONSTITUTION:A high resistance N-type epitaxial layer 9 is formed on the N<+> type silicon substrate 8 of a photodiode. A light receiving region 2 having a P<+> type impurity region is formed. An N<+> type impurity region 7 is formed on the peripheral part of the photodiode. A reflection preventing film 1 is formed at a thickness enough to provide the optimum effect with respect to the wavelength of incident light. An SiO2 film 5 is formed on a region where the high resistance layer is exposed to the surface from a P-N junction part and on the region 7 by a CVD method. A silicon nitride film 6 is formed on the film 5. Thus, the effect of the reflection preventing film 1 becomes the maximum.
Inventors:
YAMAMOTO KAZUHIKO
YAMAGUCHI MASAYUKI
YAMAGUCHI MASAYUKI
Application Number:
JP23040286A
Publication Date:
October 08, 1997
Filing Date:
September 29, 1986
Export Citation:
Assignee:
MATSUSHITA DENSHI KOGYO KK
International Classes:
H01L31/10; H01L31/02; (IPC1-7): H01L31/10; H01L31/02
Domestic Patent References:
| JP55154784A | ||||
| JP57155785A |
Attorney, Agent or Firm:
Tomoyuki Takimoto