Title:
【発明の名称】電荷転送素子
Document Type and Number:
Japanese Patent JP2672507
Kind Code:
B2
Abstract:
In a charge transfer device, the threshold voltage of a drive MOS transistor in an output circuit is set to be largest among those of MOS transistors of the same conductivity type which are formed on a substrate. Even under a large reset pulse, the MOS transistor is operable in a saturation region, because its threshold voltage is set to be large.
Inventors:
Shinichi Imai
Application Number:
JP12460887A
Publication Date:
November 05, 1997
Filing Date:
May 21, 1987
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G11C19/28; H01L21/339; H01L29/762; H04N5/335; H04N5/341; H04N5/355; H04N5/369; H04N5/372; H04N5/374; H04N5/378; (IPC1-7): H01L29/762; H01L21/339
Domestic Patent References:
| JP55145367A | ||||
| JP59132668A |
Attorney, Agent or Firm:
Takehiko Suzue (2 outside)