Title:
【発明の名称】半導体装置の金属化層間の相互接続を提供する方法及び装置
Document Type and Number:
Japanese Patent JP2682668
Kind Code:
B2
Abstract:
A metal stud (24) is provided for interconnecting levels of metallization separated by an insulator on a semiconductor slice (10). A lead (12) is coated with a refractory metal (14) and a platable metal cap (16). A photoresist (18 ) is then applied and a cavity (22) is formed within the photoresist (18 ). The cavity (22) is plated to form the stud (24). The stud (24) is clad with a corrosion resistant layer (28).
Inventors:
Bobbie A. Roan
Application Number:
JP27720388A
Publication Date:
November 26, 1997
Filing Date:
November 01, 1988
Export Citation:
Assignee:
Texas Instruments Incorporated
International Classes:
H01L21/768; H01L23/522; (IPC1-7): H01L21/768
Domestic Patent References:
| JP60153149A |
Attorney, Agent or Firm:
Akira Asamura (2 outside)