Title:
【発明の名称】半導体装置の製造方法
Document Type and Number:
Japanese Patent JP2688609
Kind Code:
B2
Abstract:
PURPOSE:To form two or more elements on the same substrate by a method wherein a process where an epitaxial layer whose specific resistance is different from that of the substrate is made to grow and another process where an opening is bored in the epitaxial layer through patterning to expose the substrate are provided. CONSTITUTION:An epitaxial layer 2 provided with a specific resistance and thickness adequate for a transistor is grown on a substrate 1 possessed of a specific resistance and thickness adequate for a photodiode. A part of the epitaxial layer 2 to be a photodiode is removed through a patterning using an anisotropic etching solution so as to bore an opening in a part of the substrate 1, and an anode and a base are diffused into the opening of the substrate 1 and the part of the epitaxial layer 2 to be a transistor respectively at the same time for the formation of an anode 3 and a base 4, and thus a semiconductor device A which is provided with a photodiode and a transistor built in the same substrate of a chip can be manufactured. Therefore, a photodiode and a transistor can be formed in the same substrate without deteriorating their characteristics.
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Inventors:
Takahashi Susumu
Application Number:
JP5827188A
Publication Date:
December 10, 1997
Filing Date:
March 14, 1988
Export Citation:
Assignee:
New Japan Radio Co., Ltd.
International Classes:
H01L27/14; H01L31/10; (IPC1-7): H01L31/10; H01L27/14
Domestic Patent References:
| JP62247563A | ||||
| JP62158372A | ||||
| JP60211972A |
Attorney, Agent or Firm:
Nagao Tsuneaki