Title:
【発明の名称】絶縁層の上に成長層を有する半導体装置の製造方法
Document Type and Number:
Japanese Patent JP2690412
Kind Code:
B2
Abstract:
A semiconductor device is manufactured by forming an epitaxial layer 22 insulated from a silicon substrate 2, and forming a device in the epitaxial layer 22. On the semiconductor substrate 2, a silicon dioxide layer 4 is formed (FIG. 2A). Then the silicon dioxide layer 4 is provided with openings 14 (FIG. 2D). Silicon is grown until it protrudes from the openings 14 to thereby form a silicon seed crystal layer 16 (FIG. 2E). Next, a silicon nitride layer 18 is formed on the surface of the silicon seed crystal layer 16 and thereafter is oxidized. A field oxide layer 20 is thereby bonded at the lower portion of the openings 14, the silicon seed crystal layer 16 being insulated from the silicon substrate 2. Thereafter, epitaxial growth is effected from the silicon seed crystal layer 16, obtaining an epitaxially grown layer 22.
Inventors:
Hidetaka Takasu
Application Number:
JP13874291A
Publication Date:
December 10, 1997
Filing Date:
June 11, 1991
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H01L21/762; H01L21/20; (IPC1-7): H01L21/20
Domestic Patent References:
| JP62183107A | ||||
| JP61264717A | ||||
| JP6066443A | ||||
| JP61284911A | ||||
| JP1214110A |
Attorney, Agent or Firm:
Furuya Eiko