Title:
【発明の名称】エッチング残留物除去方法
Document Type and Number:
Japanese Patent JP2731750
Kind Code:
B2
Abstract:
A method for removing etch residue material in which the removing process is simple, and the metal is prevented from being corroded or damaged. The method for removing etch residue materials and photoresist after carrying out a dry etching includes the steps of preparing a dry chemical by using one or more gas compounds, and removing the etch residue materials by raising the dry chemical above a critical point, wherein the dry chemical comprises carbon dioxide gas and one or more gases selected from a group consisting of DMSO (dimethyl sulfoxide), DMFA (dimethyl formamide), and THF (phentydrone).
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Inventors:
JAEEJEONGU KIMU
Application Number:
JP13486095A
Publication Date:
March 25, 1998
Filing Date:
June 01, 1995
Export Citation:
Assignee:
ERU JII SEMIKON CO LTD
International Classes:
H01L21/302; B08B7/00; G03F7/26; G03F7/36; H01L21/02; H01L21/027; H01L21/3065; H01L21/3213; (IPC1-7): H01L21/3065; H01L21/027
Domestic Patent References:
| JP383337A | ||||
| JP5305203A | ||||
| JP2237645A | ||||
| JP5296662A | ||||
| JP6196472A |
Attorney, Agent or Firm:
Junnosuke Nakamura (1 outside)