Title:
【発明の名称】位相同期型半導体レーザ
Document Type and Number:
Japanese Patent JP2755504
Kind Code:
B2
Abstract:
A phase lock type semiconductor laser comprising: an array type semiconductor laser main body which includes a plurality of line-shaped active layers having wave guides disposed in parallel with each other, these active layers having waveguide modes optically coupled with each other, and a reflection-type light diffraction element executing a light return or feedback in such a manner that only a specific wavelength beam among emitted beams of coupling modes which are emitted from one end surface of the semiconductor laser main body in terms of a line-shaped light source can be directly focused on the same one end surface of the semiconductor laser main body in a line-shaped.
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Inventors:
Yoshikazu Hori
Togawa Fumihiro
Togawa Fumihiro
Application Number:
JP13689491A
Publication Date:
May 20, 1998
Filing Date:
June 10, 1991
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01S5/00; H01S5/40; (IPC1-7): H01S3/18
Domestic Patent References:
| JP61183985A | ||||
| JP232581A | ||||
| JP2209784A |
Attorney, Agent or Firm:
Yoshihiro Morimoto