Title:
【発明の名称】能動型半導体構造の製造方法及び能動型半導体構造を有する電界効果トランジスタ
Document Type and Number:
Japanese Patent JP2780845
Kind Code:
B2
Abstract:
A novel unipolar transistor device has been realised starting from two-dimensional electron systems (2DES) in modulation-doped AlGaAS/GaAs heterostructures. A 600nm wide 1D channel is insulated laterally from 2DES regimes by 700nm wide deep mesa etched trenches. The conductivity in the quasi-one-dimensional channel can be tuned via the in-plane lateral-field effect of the adjacent 2DES-gates where the vacuum (or air) in the etched trenches serves as the dielectric. Room temperature operation is demonstrated yielding a 16 mu S transconductance corresponding to 160mS/mm 2D transconductance.
Inventors:
Andreas Vieck
Claus Claus
Claus Claus
Application Number:
JP11501490A
Publication Date:
July 30, 1998
Filing Date:
April 27, 1990
Export Citation:
Assignee:
Max-Planck-Gezel Shaft Tour Ferdernk der Wissenschafften A. Fau.
International Classes:
H01L21/265; H01L21/3205; H01L21/335; H01L21/338; H01L21/76; H01L21/822; H01L29/80; H01L21/8252; H01L23/52; H01L27/04; H01L27/06; H01L27/12; H01L29/06; H01L29/32; H01L29/423; H01L29/51; H01L29/775; H01L29/778; H01L29/78; H01L29/812; H01L29/86; (IPC1-7): H01L29/778; H01L21/3205; H01L21/338; H01L27/12; H01L29/78; H01L29/812
Domestic Patent References:
| JP227739A |
Attorney, Agent or Firm:
Fujiya Shiga (1 person outside)