Title:
【発明の名称】電気的にプログラム可能なメモリ及びメモリへのデータ書き込み方法
Document Type and Number:
Japanese Patent JP2807203
Kind Code:
B2
Abstract:
The method involves writing a word in a gp. of memory cells, selected in a line of the memory, a particular sequence is followed. Line memory cell state and values of different reference (Vref, VRH, VRB) are read. Then these readings are verified with different reference values. If no agreement is found for at least one cell of a word, this is rewritten. The desired word is written in the selected gp. of cells. Cell state reading may comprise a comparison of voltage or current of the cell with a reference, having a central (Vref), auxiliary (VRH), greater than the central, or another auxiliary (VRB), less than the central value. A word with central reference value may have its value stored in a register (REG).
Inventors:
MAGUZANSU AURA
ARETSUSANDORO BURIGATEI
NIKORA DOMANJU
MARUKU GUEJI
ARETSUSANDORO BURIGATEI
NIKORA DOMANJU
MARUKU GUEJI
Application Number:
JP35454995A
Publication Date:
October 08, 1998
Filing Date:
December 20, 1995
Export Citation:
Assignee:
ESU JEE ESU TOMUSON MIKUROEREKUTORONIKUSU SA
International Classes:
G11C17/00; G11C16/02; G11C16/34; (IPC1-7): G11C16/02
Domestic Patent References:
| JP62175998A | ||||
| JP3222196A |
Attorney, Agent or Firm:
Takashi Koshiba