Title:
【発明の名称】発光素子
Document Type and Number:
Japanese Patent JP2819823
Kind Code:
B2
Abstract:
PURPOSE:To provide a steep threshold curve for the light emission intensity and make dielectric breakdown hardly occur by constructing a positive hole implantation layer or an electron implantation layer in the form of a non-linear electric conductive inducing later which is composed of a highpolymer insulating body and an electric charge moving substance dispersed in this highpolymer insulating body. CONSTITUTION:A base board is made of pylex glass 11, and a pattern is formed on an ITO electroconductive substance film to yield a cathode 12, and a crude solution of polydiisopropyl fumarate is applied to this base board 11. Thus a non-linear electric conduction inducing layer 13 is formed which is provided with a positive hole implantation function, and thereover anthracene is attached by vacuum evaporation to form a light emitting layer 14, and further thereover Cr is attached by vacuum evaporation, followed by pattern formation to make a pos. electrode 15. Thus a light emitting element is accomplished. In this manner, the positive hole implantation layer or electron implantation layer works also as a non-linear electric conduction inducing layer 13 and, further, they are composed of a highpolymer insulating body and an electric charge moving substance dispersed in this insulating body having excellent withstand voltage and mechanical strength, so that the light emission intensity threshold curve for the impression voltage can be made steep, and dielectric breakdown hardly occurs.
Inventors:
Miyashita Satoru
Application Number:
JP31540490A
Publication Date:
November 05, 1998
Filing Date:
November 20, 1990
Export Citation:
Assignee:
Seiko Epson Corporation
International Classes:
C09K11/06; H01L33/26; H01L33/40; H01L51/50; H05B33/14; (IPC1-7): H05B33/14; C09K11/06
Attorney, Agent or Firm:
Kisaburo Suzuki (1 outside)