Title:
【発明の名称】Bi系超電導薄膜の形成方法
Document Type and Number:
Japanese Patent JP2854397
Kind Code:
B2
Abstract:
PURPOSE:To carry out in-situ formation of the subject thin film having a high critical point and a crystal structure excellent in orientation by forming a superconductor thin film on a heated basal plate in a specified condition in formation of the subject thin film by the molecular epi-method using pure O3. CONSTITUTION:In the formation of the subject thin film by the molecular beam epi-method using pure O3, pure O3 is supplied having an amount of about 100 times or more of the strength of Cu molecular beam. The strength of Bi, Sr, Ca and Cu molecular beams and the supply of pure O3 are controlled respectively so that the composition of the thin film may be stoichiometric, thus forming the objective superconductor thin film on a heated basal plate.
Inventors:
OGIWARA MITSUHIKO
TODA NORIHIKO
ABE HITOSHI
TODA NORIHIKO
ABE HITOSHI
Application Number:
JP19438990A
Publication Date:
February 03, 1999
Filing Date:
July 23, 1990
Export Citation:
Assignee:
OKI DENKI KOGYO KK
International Classes:
C01G29/00; C01G1/00; H01B12/00; H01L39/02; H01L39/24; (IPC1-7): C01G29/00; C01G1/00; H01B12/00; H01L39/24
Other References:
【文献】国際公開90/2215(WO,A1)
Attorney, Agent or Firm:
Takashi Ogaki