Title:
【発明の名称】薄膜トランジスタ型光センサの駆動方法及び駆動装置
Document Type and Number:
Japanese Patent JP2875844
Kind Code:
B2
Abstract:
The present invention relates to a method of driving a thin film transistor type optical sensor, having a gate electrode, a gate insulating layer, a thin film semiconductor layer, an ohmic contact layer, a source electrode and a drain electrode. The thin film transistor type optical sensor (S) is driven by providing the gate electrode (G) with the threshold voltage of a thin film transistor (T) adjacent to the thin film transistor type optical sensor (G) or a voltage based on this threshold voltage.
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Inventors:
SAIGA TOSHIHIRO
KOBAYASHI ISAO
UMIBE NORYUKI
ENDO TADAO
KOBAYASHI ISAO
UMIBE NORYUKI
ENDO TADAO
Application Number:
JP7840590A
Publication Date:
March 31, 1999
Filing Date:
March 27, 1990
Export Citation:
Assignee:
KYANON KK
International Classes:
H04N1/028; H01L27/146; H01L29/78; H01L29/786; H04N1/193; H04N5/361; (IPC1-7): H04N1/028; H01L27/146
Domestic Patent References:
| JP6392153A |
Attorney, Agent or Firm:
Yamashita