Title:
【発明の名称】磁気センサの製造方法
Document Type and Number:
Japanese Patent JP2879588
Kind Code:
B2
Abstract:
PURPOSE:To excellently control the orientation of pin type metal, and improve the sensitivity of a sensor, by forming an Ni thin film or a nickel antimony thin film on an InSb thin film, and recrystallizing it by a zone melt recrystallizing method. CONSTITUTION:A specified element region is formed on the silicon substrate 1 surface; a silicon oxide film 2 is formed; an InSb film 3 is formed; thereon an Ni thin film 4 is formed; a pattern having a bird's beak type seed part S for zone melt heating use is formed; thereon In2O3, SiO2, etc., are formed and used as a protecting film at the time of melting; in a vacuum, the substrate is heated on a lower heater H1, up to a specified temperature; a narrow zone is heated and melted by using a strip type upper heater H2; by moving said heater H2, every fine region is single-crystallized in succession. Hence Ni combines with Sb, and turns to NiSb of pin type metal, so that a magnetic thin film 5 is formed, in which a lot of pin type metals are oriented in the running direction of the heater H2. Finally a meander type pattern is formed; thereon indium is vacuum-evaporated as an electrode and patterned, thereby completing a magneto resistance element.
Inventors:
KAMYAMA NAOKI
Application Number:
JP11666290A
Publication Date:
April 05, 1999
Filing Date:
May 02, 1990
Export Citation:
Assignee:
GUROORII KOGYO KK
International Classes:
H01L43/12; (IPC1-7): H01L43/12
Attorney, Agent or Firm:
Kimura Takahisa