【発明の名称】半導体素子のパターン化方法

Title:

【発明の名称】半導体素子のパターン化方法

Document Type and Number:

Japanese Patent JP2883798

Kind Code:

B2

Abstract:

A workpiece is patterned in accordance with the lateral pattern of a spatially selective, electrically charged, scanning beam of actinic radiation by:- (1) directing the beam at a major surface of a conductive layer (13) that is located overlying a resist layer (11) that is sensitive to the beam, the conductive layer being transparent to the beam, the resist layer being located overlying the workpiece; (2) removing the entire thickness of the conductive layer by means of dry etching; (3) developing the resist layer, whereby the resist layer becomes a patterned resist layer in accordance with the pattern of the beam.

Inventors:

JON JOSEFU DE MARUKO
KURISUTOFUAA PIERATSUTO

Application Number:

JP34322593A

Publication Date:

April 19, 1999

Filing Date:

December 17, 1993

Export Citation:

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