Title:
【発明の名称】p型電極構造およびそれを有する半導体発光素子
Document Type and Number:
Japanese Patent JP2885198
Kind Code:
B2
Abstract:
A p-type electrode structure having low resistance and a high yield light emitting element operable at low operating voltage is disclosed. On a substrate is formed an n-type clad layer, an active layer, a p-type semiconductor layer, a current structure layer, an n-type semiconductor layer and a metal layer. The energy level of a conduction band edge of the n-type semiconductor layer is deeper than that of a valence band edge of the p-type semiconductor layer, and the Fermi level of the metal layer is shallower than the energy level of a conduction band edge of the n-type semiconductor layer.
Inventors:
IWATA HIROSHI
Application Number:
JP24662696A
Publication Date:
April 19, 1999
Filing Date:
September 18, 1996
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
H01L21/28; H01L21/331; H01L29/205; H01L29/43; H01L29/73; H01L29/737; H01L33/06; H01L33/14; H01L33/28; H01L33/32; H01L33/34; H01L33/40; H01S5/00; H01S5/323; H01S5/343; (IPC1-7): H01L33/00; H01L21/28; H01L29/43; H01S3/18
Domestic Patent References:
| JP7170026A |
Attorney, Agent or Firm:
Kihei Watanabe