Title:
【発明の名称】低抵抗タンタル薄膜の製造方法及び低抵抗タンタル配線並びに電極
Document Type and Number:
Japanese Patent JP2919306
Kind Code:
B2
Abstract:
A method for forming a lamination structure of a tantalum nitride film and a tantalum thin film free of nitrogen overlying the tantalum nitride film, which have reduced resistivities, wherein a gas pressure during sputtering for growing the tantalum nitride film is limited to a predetermined value not more than about 0.5 pa so that the tantalum nitride film has a hexagonal crystal structure and the tantalum thin film free of nitrogen has a BCC structure with lattice spacing close to that of the tantalum nitride film hexagonal crystal structure.
Inventors:
MAEDA AKYOSHI
MURATA HIDEO
HIRAKAWA EIJI
MURATA HIDEO
HIRAKAWA EIJI
Application Number:
JP15841195A
Publication Date:
July 12, 1999
Filing Date:
May 31, 1995
Export Citation:
Assignee:
NIPPON DENKI KK
HITACHI KINZOKU KK
HITACHI KINZOKU KK
International Classes:
G02F1/136; C23C14/06; C23C14/18; C23C14/34; G02F1/1343; H01B5/14; H01B13/00; H01L21/00; H01L21/28; H01L21/285; H01L21/316; H01L21/3205; H01L21/336; H01L21/768; H01L23/52; H01L21/02; (IPC1-7): C23C14/34; C23C14/06; G02F1/136; H01B5/14; H01B13/00; H01L21/285; H01L21/3205
Domestic Patent References:
| JP55100979A | ||||
| JP5507115A |
Attorney, Agent or Firm:
Asato Kato