Title:
【発明の名称】薄膜トランジスタおよびそれを用いた光センサ
Document Type and Number:
Japanese Patent JP2938083
Kind Code:
B2
Abstract:
PURPOSE:To make an input impedance high so as to obtain a voltage controlled type element easy to use by a method wherein the gate of a thin film phototransistor is composed of two or more branches which are, at least, partially connected in common. CONSTITUTION:A thin type phototransistor is formed into a bottom gate type invertedly staggered structure, gate electrodes 2 and 3 are separately formed on a glass substrate 1, light rays 9 introduced through the gap between the electrodes 2 and 3 are incident on a photosensitive semiconductor layer 5 to induce optical carriers in the layer 5. The gates 2 and 3 are provided with patterns divided into branches which are commonly connected outside the electrodes 2 and 3. After the electrodes 2 and 3 are patterned, silicon nitride to be a gate insulating film 4 and an amorphous silicon hydride to be a photosensitive semiconductor layer 5 are deposited through a CVD method. Moreover, an N-layer to serve as an ohmic contact film 6 is successively laminated following the above two layers to make an input impedance high, and thus a voltage controlled type element easy to use can be obtained.
Inventors:
TSUKADA TOSHIHISA
Application Number:
JP3506889A
Publication Date:
August 23, 1999
Filing Date:
February 16, 1989
Export Citation:
Assignee:
HITACHI SEISAKUSHO KK
International Classes:
H01L31/10; (IPC1-7): H01L31/10
Domestic Patent References:
| JP5772370A | ||||
| JP6298774A | ||||
| JP294576A | ||||
| JP2210882A |
Attorney, Agent or Firm:
Junnosuke Nakamura