Title:
【発明の名称】反応性イオン・エッチング装置および反応性イオンエッチング方法
Document Type and Number:
Japanese Patent JP2948930
Kind Code:
B2
Abstract:
Reactive ion plasma etching apparatus and method are based upon the discovery of enhanced uniformity of etching at low workpiece temperatures. With cooling to sufficiently low temperatures, spontaneous etching is inhibited and etching uniformity is controlled not by gas flow and pressure but rather by ion flux. As a result, one can eliminate uniformity enhancing apparatus which heretofore obstructed optical access to the workpiece, provide window means permitting optical access to a major portion of the workpiece and employ sophisticated optical monitoring techniques during the etching process.
More Like This:
| WO/2023/177950 | DUAL PLENUM SHOWERHEAD WITH CENTER TO EDGE TUNABILITY |
| JP5566982 | Plasma processing equipment |
Inventors:
KONSUTANTEINOSU PETOROSU JAPISU
RICHAADO ARAN GOTSUTOSHOO
JEFURII ROBAATO SHERAA
RICHAADO ARAN GOTSUTOSHOO
JEFURII ROBAATO SHERAA
Application Number:
JP5018691A
Publication Date:
September 13, 1999
Filing Date:
February 25, 1991
Export Citation:
Assignee:
EI TEI ANDO TEI CORP
International Classes:
H01J37/32; H01L21/302; H01L21/306; H01L21/3065; (IPC1-7): H01L21/3065
Domestic Patent References:
| JP63213923A | ||||
| JP63131520A | ||||
| JP6310523A | ||||
| JP60115226A | ||||
| JP265133A |
Attorney, Agent or Firm:
Hirofumi Mimata