Title:
【発明の名称】エピタキシャル成長中またはその後の化合物薄膜の光誘導蒸発による熱パターン化方法
Document Type and Number:
Japanese Patent JP2957607
Kind Code:
B2
Abstract:
In situ evaporation of selected surface regions or layers of compound semiconductors is accomplished, without breaking the growth system environment by employing photo-induced evaporation enhancement in chemical vapor deposition epitaxy. Intense radiation from an energy source (27) desorbs or causes evaporation of consecutive monolayers of atoms or combined atoms from the surface crystal (34) by thermal evaporation. The desorbed atoms from the growth surface are removed atomic layer by atomic layer in a fairly uniform and systematic manner, and may be characterized as "monolayer peeling", resulting in a morphology that is sculpturally smooth and molecularly continuous. In this sense, the method of this invention is analogous to erasing or etching crystal material and is the antithesis to laser deposition patterning, wherein erasure after growth or reduced rate of growth during growth provides "negative growth patterning". This patternable negative growth process is coupled with a positive growth process for selectively thinning regions of semiconductor layers in three-dimensional crystal structures, limited only by the functional capabilities of the growth reactor. Selective monotonic increasing and decreasing film thickness in situ can be accomplished while beam illumination (26) remains stationary for a predetermined period with exposure of the growth surface accomplished through a patterned mask or, alternatively, while the beam spot or multiple beam spots are modulated and scanned across the growth surface of the film.
Inventors:
JON II ETSUPURAA
DEIUITSUDO DABURYUU TORIITO
TOOMASU ERU PAORI
DEIUITSUDO DABURYUU TORIITO
TOOMASU ERU PAORI
Application Number:
JP25763689A
Publication Date:
October 06, 1999
Filing Date:
October 02, 1989
Export Citation:
Assignee:
ZEROTSUKUSU CORP
International Classes:
C30B33/08; H01L21/203; H01L21/205; H01L21/268; H01S5/16; H01S5/223; H01S5/227; (IPC1-7): H01L21/205
Attorney, Agent or Firm:
Minoru Nakamura (6 outside)