Title:
【発明の名称】半導体レーザモジュール
Document Type and Number:
Japanese Patent JP2970703
Kind Code:
B2
Abstract:
PURPOSE:To markedly improve the band limit of small signal frequency characteristics by removing a metal film formed over the bottom face of a ceramic block in accordance with wiring patterns connecting a bias circuit of a ceramic block with wiring patterns provided on the top face in a hermetic package. CONSTITUTION:A lead terminal 28 for connection with an external circuit is soldered on a ceramic block 27 in a hermetic package 7. On the other hand, the metallized film on the bottom face of a bias line including the lead terminal is removed. This way of removing the metallized film on the bottom face of a bias line including arranged on the ceramic block reduces parasitic capacitance in a bias circuit and of setting small signal frequency characteristics to a frequency band of -3dB markedly improves the frequency band of a prior art semiconductor laser module. Thus, parasitic capacitance in a bias circuit can be removed, so that modulation characteristics can be improved markedly.
Inventors:
SATO KAZUYOSHI
Application Number:
JP18792191A
Publication Date:
November 02, 1999
Filing Date:
July 26, 1991
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
G02B6/42; H01S5/00; H01S5/022; (IPC1-7): H01S3/18
Domestic Patent References:
| JP4150086A | ||||
| JP311690A | ||||
| JP6437891A |
Attorney, Agent or Firm:
Yosuke Goto (1 person outside)