Title:
【発明の名称】半導体記憶装置
Document Type and Number:
Japanese Patent JP2976912
Kind Code:
B2
Abstract:
A semiconductor memory device laid out to have a deep well of a second conductivity type formed in a semiconductor substrate of a first conductivity type, a cell array well of the first conductivity type formed on said deep well, and an isolation well of the second conductivity type formed around said cell array well to reach said deep well so as to incorporate said cell array well, thereby isolating said cell array well from said semiconductor substrate through said isolation well, wherein a circuit element for driving said cell array is formed in said isolation well.
Inventors:
SAEKI TAKANORI
Application Number:
JP353997A
Publication Date:
November 10, 1999
Filing Date:
January 13, 1997
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
H01L21/8242; H01L21/761; H01L27/02; H01L27/105; H01L27/108; (IPC1-7): H01L27/108; H01L21/8242
Attorney, Agent or Firm:
Suzuki Akio