Title:
【発明の名称】高出力GaAs半導体装置
Document Type and Number:
Japanese Patent JP3038819
Kind Code:
B2
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Inventors:
Akira Saito
Application Number:
JP17303790A
Publication Date:
May 08, 2000
Filing Date:
June 30, 1990
Export Citation:
Assignee:
NEC
International Classes:
H01L29/812; H01L21/338; H01L29/41; (IPC1-7): H01L21/338; H01L29/41; H01L29/812
Domestic Patent References:
| JP1134975A | ||||
| JP63276276A |
Attorney, Agent or Firm:
Suzuki Akio