Title:
【発明の名称】酸化膜形成方法
Document Type and Number:
Japanese Patent JP3078853
Kind Code:
B2
Abstract:
PCT No. PCT/JP91/01799 Sec. 371 Date Oct. 13, 1993 Sec. 102(e) Date Oct. 13, 1993 PCT Filed Dec. 27, 1991 PCT Pub. No. WO92/12274 PCT Pub. Date Jul. 23, 1992.A method of forming an oxide film of a high quality 400 DEG C. or below. Ions of an inert gas, whose kinetic energy is 90 or below eV, are applied on the surface of a material of a semiconductor, metal or alloy, and oxygen gas molecules are fed. Thereby, a thin oxide film of the material is formed on the surface of the material.
Inventors:
Tadahiro Ohmi
Application Number:
JP1000891A
Publication Date:
August 21, 2000
Filing Date:
January 01, 1991
Export Citation:
Assignee:
Tadahiro Ohmi
International Classes:
C23C14/00; C23C14/08; C23C14/48; H01L21/316; (IPC1-7): H01L21/316; C23C14/08; C23C14/48
Domestic Patent References:
| JP3222327A | ||||
| JP3204925A |
Attorney, Agent or Firm:
Hisao Fukumori